Constant voltage output circuit

ABSTRACT

This invention relates to a constant voltage output circuit using, as its reference potential source, power source feed terminals for feeding a power source voltage to a reference potential source of a given circuit. The constant voltage output circuit includes a series circuit of an npn transistor and a pnp transistor interposed between the reference potential source of the given circuit and the power source feed terminals, means for biasing the base potential of the pnp transistor by a predetermined potential with respect to the potential of the power source feed terminals, and an emitter follower circuit disposed in the collector output circuit of the npn transistor of the series circuit, and forming a negative feed-back circuit.

BACKGROUND OF THE INVENTION

This invention relates to a constant voltage output circuit and more particularly to a constant voltage output circuit for obtaining a constant voltage using a voltage level of an input power source given to a reference potential as its reference.

In an electronic circuit, a constant voltage output circuit is sometimes required in order to obtain a certain constant voltage, which is stabilized with respect to voltage fluctuation of a power source, using, as its reference potential, a power source potential (power source voltage level) given to a reference potential (ground potential) of the electronic circuit. Such a constant voltage output circuit must, first of all, have excellent electrical characteristics. At the same time, it must have a circuit arrangement which does not impose limitation on production techniques of semiconductor integrated circuitry since it may be formed in a semi-conductor substrate such as a silicon substrate together with other necessary electronic circuits.

A constant voltage output circuit such as shown in FIG. 1 would readily be devised as a simple circuit for obtaining a constant voltage by use of a potential at a power source terminal, which feeds a power source voltage to a reference potential of the circuit, as its reference potential, on the contrary. In this circuit the output of a series circuit consisting of a zener diode Z₁₀ and a resistor R₁₀ is received by an emitter follower circuit consisting of a transistor Q₁₀ and a resistor R₁₁ to obtain a constant voltage V_(out) from the emitter. As the zener diode Z₁₀ is connected on the side of the power source in this circuit, the constant voltage V_(out) is obtained across the collector and emitter of the transistor Q₁₀ using a power source voltage level V_(cc) as its reference potential. The circuit of this type uses an npn transistor as an output transistor (Q₁₀) for which a large current capacity is required. From the aspect of integrated circuit techniques, the use of the npn transistor is more advantageous than the use of a pnp transistor of a lateral construction calling for a relatively greater occupying area because it minimizes a space requirement in the semiconductor substrate. From the aspect of electric characteristics, however, this constant voltage output circuit is not free from a drawback in that it is not easy to obtain a low output impedance because the output impedance of the constant voltage output circuit relies upon the emitter resistor R₁₁ that determines the operating current of the emitter follower circuit.

SUMMARY OF THE INVENTION

It is therefore an object of the present invention to provide a constant voltage output circuit which has a low output impedance and is suited for integration of a semiconductor circuit by use of a power source voltage level as its reference level.

The constant voltage output circuit in accordance with the present invention comprises a series circuit of a pnp transistor and an npn transistor whose emitters are connected with each other; a circuit for feeding a constant voltage between the base of the pnp transistor and a power source line; and an emitter follower output circuit including an npn transistor coupled so as to give negative feed-back to the abovementioned npn transistor. In accordance with the present invention, an npn transistor suited for integration of the circuit is used as an output transistor requiring a large current capacity. Further, the output impedance can be made remarkably small because the npn transistor of the series circuit and the npn transistor of the emitter follower circuit together form the negative feed-back circuit.

The present invention will become more apparent from the following detailed description taken in conjunction with the accompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a circuit diagram of a constant voltage output circuit constructed by the inventors of the present invention by modifying prior art technique;

FIGS. 2 and 3 are circuit diagrams of the constant voltage output circuits in accordance with the present invention; and

FIG. 4 is a diagram showing current density-v-temperature coefficient curves of a zener diode and a transistor, respectively.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

FIG. 2 is a circuit diagram showing an embodiment of the present invention.

This circuit is a constant voltage output circuit for obtaining a constant output voltage V_(out) with respect to a power source voltage level V_(cc), as a reference level, applied to a power source terminal P₆ with a ground terminal P₄ being a reference potential (ground potential). In other words, the output voltage V_(out) is obtained between the power source terminal P₆ and an output terminal P₅. A series circuit consisting of a zener diode Z₁ and a resistor R₄ is a constant voltage producing circuit.

A constant voltage output of the zener diode Z₁ is applied to the base of a pnp transistor Q₁ and the emitter of an npn transistor Q₂ is connected to the emitter of the pnp transistor Q₁ so that these transistors Q₁ and Q₂ together form a modified differential amplification circuit. The abovementioned constant voltage signal is level-shifted in a magnitude corresponding to the base-to-emitter voltages (V_(BEQ1) and V_(BEQ2)) of these transistors Q₁, Q₂ thereby to provide the constant output voltage V_(out).

Resistors R₁ and R₂ are connected to the collectors of the transistors Q₁ and Q₂, respectively, and they are bias resistors for determining the operating current of the transistors.

An output npn transistor Q₃ having its emitter connected to the base of the transistor Q₂ on the output side of the deformed differential amplification circuit and having its base connected to the transistor Q₂ constitutes a negative feed-back circuit. A constant current circuit I_(o) connected to the emitter of this transistor Q₃ is to set a bias current to the transistor Q₃ in consideration of a load interposed between the terminals P₅ and P₆.

In the circuit of this embodiment, the transistors Q₂ and Q₃ form the negative feed-back circuit to obtain the constant output voltage V_(out) as described above. Accordingly, it is possible to drastically reduce the output impedance in comparison with a circuit configuration which merely uses an emitter follower circuit. In other words, the output voltage becomes an extremely small value because it is a value obtained by dividing an output impedance at the time of open loop without negative feed-back by a feed-back quantity. It is therefore possible to make this value smaller than 1/1,000 of the load resistor R₂, for example.

In the present invention, a series circuit consisting of the base-emitter paths of the transistors Q₁, Q₂ and Q₃ is wired in parallel to the zener diode Z₁. Accordingly, it is possible to restrict fluctuation of the emitter current flowing through the transistors Q₁ and Q₂ with respect to fluctuation of the power source voltage V_(cc). As a result, it is possible to make the fluctuation of the consumed current relatively small with respect to the power source fluctuation.

In the present invention, further, the output transistor Q₃ is formed by an npn transistor. In forming a semiconductor integrated circuit, the output transistor having a large current capacity can be formed with a relatively limited space requirement in a semiconductor chip that forms the semiconductor integrated circuit.

The base-to-emitter voltages V_(BEQ1) and V_(BEQ2) of the transistors Q₁ and Q₂ and the zener voltage V_(Z1) of the zener diode Z₁ fluctuate in accordance with the operating currents flowing through them, respectively. In order to obtain a constant voltage having still higher stability, it is desired to render their bias currents constant.

In accordance with the present invention, it is further possible to obtain a constant voltage output circuit having high stability that is temperature-compensated. FIG. 3 is a circuit diagram of another embodiment of the temperature-compensated constant voltage output circuit in accordance with the present invention.

In the circuit shown in FIG. 3, a constant voltage signal to be applied to the base of the pnp transistor Q₁ on the input side is obtained from a level shift circuit consisting of a diode-connected pnp transistor Q₇ for making temperature compensation of the transistor Q₁ on the input side, a diode-connected npn transistor Q₆ for making temperature compensation of the npn transistor Q₂ on the output side and a diode-connected npn transistor Q₅ for making temperature compensation of the zener diode Z₁ that forms a constant voltage signal (zener potential; V_(Z1)).

An npn transistor Q₈ and a resistor R₄ connected in series with this level shift circuit constitute a constant current circuit for forming a bias current to the level shift circuit. A resistor R₇, a diode-connected pnp transistor Q₉ and a resistor R₆ are connected at both ends, or at the constant voltage output, of a zener diode Z₂, which forms a constant voltage circuit together with a resistor R₈, so as to produce a constant current, and the bases of the transistors Q₉ and Q₈ are mutually connected thereby to constitute a current mirror circuit and to supply the collector of the transistor Q₈ with a constant bias current.

On the other hand, a diode-connected npn transistor Q₁₀ is disposed on the collector side of the transistor Q₂ which forms the modified differential amplification circuit together with the transistor Q₁.

A constant current circuit consisting of a transistor Q₄ and a resistor R₅ is connected to the emitter of the output npn transistor Q₃ forming the negative feed-back circuit, said transistor Q₄ being driven by the transistor Q₉ biased by the constant current.

The output voltage V_(out) produced across the terminals P₈ and P₉ of this circuit can be obtained by the equation (1) below;

    V.sub.out =V.sub.cc -V.sub.Z1 -V.sub.BEQ5 -V.sub.BEQ7 +V.sub.BEQ1 +V.sub.BEQ2                                               (1)

where V_(BEQ1), V_(BEQ2), V_(BEQ5), V_(BEQ6) and V_(BEQ7) are base-to-emitter voltages of the transistors Q₁, Q₂, Q₅, Q₆ and Q₇, respectively, and V_(Z1) is a zener voltage of the zener diode Z₁. p It is hereby assumed that the zener voltage V_(Z1) has a positive temperature coefficient or the zener diode Z₁ used has a zener voltage such as 5.6 V, for example. On the other hand, since the base-to-emitter voltage V_(BE) of the transistor has a negative temperature coefficient, temperature compensation in the circuit of this embodiment is carried out by providing the zener diode Z₁ with the transistor Q₅ so as to mutually offset their temperature coefficients. As can also be seen clearly from the equation (1), the fluctuation of the base-to-emitter voltage of the transistor Q₆ is compensated by the transistor Q₂ and that of the transistor Q₇, by the transistor Q₁. As a result, it is possible to make the temperature compensation of the output voltage V_(out).

The absolute values of the temperature coefficients of the zener diode Z and the transistors Q vary depending on the current density as shown in FIG. 4.

In this embodiment, therefore, a current value is so set in consideration of element sizes as to obtain a current density at the point of intersection of the curves Z and Q at which the absolute values of the temperature coefficients of the zener diode D₁ and the transistor Q₅ become equal to each other. The density of the current flowing through the transistor Q₇ is made equal to the density of the current flowing through the transistor Q₁ while the current density of the transistor Q₆ is made equal to that of the transistor Q₂.

It is of course possible to let the current densities of the transistors Q₆ and Q₇ relatively coincide with those of the transistors Q₁ and Q₂.

Assuming now that the element size of the transistor Q₆ is made coincide with that of the transistor Q₂ and the size of the transistor Q₇, with that of the transistor Q₁, so as to make their current values coincide with each other, respectively, and thus make their current densities coincide with each other. In this case, the current I₁ flowing through the level shift circuit can be obtained by the equation (2) below: ##EQU1## where V_(Z2) is a zener voltage of the zener diode Z₂ and V_(BEQ9) is a base-to-emitter voltage of the transistor Q₉.

Since the transistors Q₉ and Q₈ together constitute the current mirror circuit, the current flowing through the transistor Q₉ can be made equal to the current I₁ flowing through the transistor Q₈ by making the resistor R₄ equal to the resistor R₆. In other words, the current I₁ of the abovementioned level shift circuit can be obtained from the equation (2).

The base currents of the transistors Q₈, Q₉ and Q₄ in the current mirror circuit are neglected in the formula (2) because they are insignificant. If necessary, however, a transistor may be added in order to correct these base currents.

On the other hand, a current I₂ flowing through the differential transistor circuit consisting of the pnp transistor Q₁ and npn transistor Q₂ can be obtained from the equation (3) below: ##EQU2## where V_(BEQ10) is a base-to-emitter voltage of the transistor Q₁₀.

As can be seen clearly from the equation (3), the voltage level-shifted by the transistors Q₅ -Q₇ is compensated by the transistors Q₁ -Q₃ so that the voltage produced at the transistor Q₁₀ and the resistor R₂ becomes equal to the abovementioned zener voltage V_(Z1), thereby providing the current I₂ from the equation (3).

In the abovementioned equations (2) and (3), the current I₁ becomes substantially equal to the current I₂ if the zener diodes Z₁ and Z₂ have the same characteristics so as to satisfy the equation V_(Z1) =V_(Z2) and if R₆ +R₇ is R₂. When the current I₁ is equal to the current I₂, the base-to-emitter voltage V_(BEQ9) of the transistor Q₉ is equal to the base-to-emitter voltage V_(BEQ10) of the transistor Q₁₀. For this reason, the current I₁ is perfectly equal to the current I₂ as can be seen clearly from the equations (2) and (3).

The constant of each element determining these current values changes similarly depending on the temperature change and no relative change occurs between both current values so that it is possible to satisfy the relation ##EQU3## Accordingly, the relations -V_(BEQ6) +V_(BEQ2) =0 and -V_(BEQ7) +V_(BEQ1) =0 can be satisfied from the equation (1) over the entire temperature range to be compensated for and a stable output voltage V_(out) can be obtained.

Especially, by forming the circuit of this embodiment in a monolithic semiconductor integrated circuit, it is easy to obtain matching of the temperature characteristics between the transistor and the zener diode and a predetermined ratio of resistance between the resistors and also to make their changes with respect to the temperature change equal to each other. Hence, it is possible to obtain an extremely stable output voltage V_(out).

The circuit of this embodiment makes it possible to obtain a stable output which is stable not only with respect to the temperature change but also to the fluctuation of the power source voltage V_(cc).

In the circuit of this embodiment, further, it is necessary to make the current flowing through the transistor Q₃ equal to the abovementioned current I₁. This is because the equation (3) is formulated on the premise that the base-to-emitter voltage V_(BEQ3) of the transistor Q₃ is equal to the base-to-emitter voltage V_(BEQ5) or V_(BEQ6) of the transistor Q₅ or Q₆.

For the reason described above, the bias current of this transistor Q₃ is formed by the transistor Q₉ and the transistor Q₄, the latter driving the current mirror circuit together with the resistor R₅, as shown in the drawing.

As illustrated in the above-described embodiments, the constant voltage output circuit in accordance with the present invention obtains an output voltage using the differential transistors Q₁ and Q₂ to make a level shift. Hence, it is possible to provide a level shift circuit for temperature compensation in a circuit which is to produce a reference voltage, and also to optionally set a current to the level shift circuit and the differential circuit. Accordingly, coincidence of the current densities can be made freely in consideration of the element sizes and the temperature compensation can be made easily.

As noted in the foregoing paragraph, the present invention is especially effective as a constant voltage circuit for obtaining a constant voltage using a potential of the power source voltage applied to a reference potential of the circuit, as its reference potential, on the contrary. Hence, the present invention is effective for such a circuit as a drive control circuit of a d.c. motor, for example, where a positive power source voltage is applied with respect to the reference potential source of the circuit, and a given constant voltage using the power source voltage level as a reference level is required.

It is to be noted that various modifications and changes may be apparent to those skilled in the art without departing from the spirit and the scope of the invention. 

What is claimed is:
 1. A constant voltage output circuit comprising:first and second power source terminals for supplying a power source voltage; a series circuit consisting of a first pnp transistor and a first npn transistor, each having its emitter connected to the emitter of the other; means for connecting the collector of said first pnp transistor to said first power source terminal; load means interposed between the collector of said first npn transistor and said second power source terminal; a second npn transistor having its base connected to the collector of said first npn transistor, its collector connected to said second power source terminal and its emitter connected to the base of said first npn transistor as well as connected to said first power source terminal via second load means; reference voltage feed means for impressing a reference voltage across the base of said first pnp transistor and said second power source terminal; and an output terminal connected to the emitter of said second npn transistor, thereby providing a constant output voltage across it and said second power source terminal.
 2. The constant voltage output circuit as defined in claim 1 wherein said reference voltage feed means consists of:constant voltage diode means interposed between the base of said first pnp transistor and said second power source terminal; and third load means for supplying said constant voltage diode means with a bias current, said third load means interposed between the base of said first pnp transistor and said first power source terminal.
 3. The constant voltage output circuit as defined in claim 2 wherein said third load means consists of a constant current circuit for feeding a constant current to said constant voltage diode means.
 4. The constant voltage output circuit as defined in claim 3 wherein said constant current circuit comprises:a third npn transistor having its collector-emitter path interposed between the base of said first pnp transistor and said first power source terminal; a diode-connected fourth pnp transistor interposed between the base of said third npn transistor and said first power source terminal, thereby forming a current mirror circuit together with said third transistor; and means for supplying a bias current to said fourth transistor.
 5. The constant voltage output circuit as defined in any one of claims 2, 3 or 4 wherein said constant voltage diode means comprises a series circuit consisting of a diode-connected pnp transistor, a diode-connected npn transistor and a zener diode connected in series with one another.
 6. The constant voltage output circuit as defined in any one of claims 1, 2, 3 or 4 wherein said second load means comprises a constant current circuit including an npn transistor interposed between the emitter of said second npn transistor and said first power source terminal. 